DF2B5M4SL - ESD Protection Diodes

Product Overview

Toshiba Semiconductor

Part number	DF2B5M4SL
Manufacturer	Toshiba Semiconductor
File Size	349.76 KB
Description	ESD Protection Diodes
Datasheet	DF2B5M4SL Datasheet
Additional preview pages of the DF2B5M4SL datasheet.

(1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.5 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.32 m.

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Published: Sep 29, 2016 |