C2996 Datasheet - Toshiba Semiconductor

C2996 2SC2996

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications 2SC2996 Unit: mm High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO.

C2996-ToshibaSemiconductor.pdf