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C2669 2SC2669

C2669 Description

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power .

C2669 Applications

* Unit: mm
* High power gain: Gpe = 30dB (typ. ) (f = 10.7 MHz)
* Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipat

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2SC2669 Toshiba Semiconductor
Toshiba Semiconductor C2669-like datasheet