C2669 2SC2669

Toshiba Semiconductor

Description

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power .

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Datasheet Specifications

Part number: C2669
Manufacturer: Toshiba ↗ Semiconductor
File Size: 291.14 KB
Datasheet: C2669-ToshibaSemiconductor.pdf
Description: 2SC2669

Applications

* Unit: mm
* High power gain: Gpe = 30dB (typ. ) (f = 10.7 MHz)
* Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipat

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