3SK256 Datasheet (Toshiba Semiconductor) - Silicon N Channel Dual Gate MOS Type FET

3SK256, Silicon N Channel Dual Gate MOS Type FET

3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance.

Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2