2SK4012 Datasheet - Toshiba Semiconductor

2SK4012 N-Channel MOSFET

www.DataSheet4U.com 2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications z Low drain source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.33 Ω (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain gate .

2SK4012 Features

* s intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use

2SK4012 Datasheet (219.95 KB)