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2SK3935
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3935
Switching Regulator Applications
z Low drain-source ON resistance: z High forward transfer admittance: z Low leakage current: RDS (ON) = 0.18 Ω (typ.) |Yfs| = 10 S (typ.) Unit: mm
IDSS = 100 μA (max) (VDS = 450 V)
z Enhancement model: Vth = 2.0 to 4.
2SK3935 Datasheet
