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2SK3845
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching Regulator, DC-DC Converter Applications and Motor Drive Applications
• • • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 70 280 125 328 70 12.5 150 −55 to150 Unit V V V A W mJ A mJ °C °C
Pulse (Note 1)
1. GATE 2. DRAIN (HEAT SINK) 3.
2SK3845 Datasheet
