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2SK3371 - N-Channel MOSFET

Features

  • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ. ) High forward transfer admittance: |Yfs| = 0.85 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) www. DataSheet4U. com Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR.

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Datasheet Details

Part number 2SK3371
Manufacturer Toshiba
File Size 211.29 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3371 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.
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