2SK3126 N-Channel MOSFET

Toshiba Semiconductor

Description

2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain

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Datasheet Specifications

Part number: 2SK3126
Manufacturer: Toshiba ↗ Semiconductor
File Size: 144.16 KB
Datasheet: 2SK3126_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 0.48 Ω (typ. ) z High forward transfer admittance : |Yfs| = 7.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Chara

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2SK3126 N-Channel MOSFET Toshiba Semiconductor

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