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2SK2698 - Silicon N-Channel MOSFET

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  • he RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive.

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Datasheet Details

Part number 2SK2698
Manufacturer Toshiba
File Size 447.04 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2698 Datasheet

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2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2698 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.35 Ω (typ.) : |Yfs| = 11 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 630 15 15 150 −55~150 Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3.