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2SK1358 - Silicon N-Channel MOSFET

Features

  • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ. ).
  • High Forward Transfer Admittance - Yfs = 4.0S (Typ. ).
  • Low Leakage Current - IDSS = 300µA (Max. ) @ VDS = 720V.
  • Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C).

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Datasheet Details

Part number 2SK1358
Manufacturer Toshiba
File Size 568.20 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK1358 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance - Yfs = 4.0S (Typ.) • Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode - Vth = 1.5 ~ 3.
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