2SJ334 Datasheet - Toshiba Semiconductor

2SJ334 P-Channel MOSFET

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ334 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance : |Yfs| = 23 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Abso.

2SJ334 Features

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2SJ334 Datasheet (421.83 KB)