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TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington)
2SD2584
High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SD2584
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
120 100
6 7 10 0.7 1.5 20 150 −55 to 150
Unit V V V
A
A
W
°C °C
Equivalent Circuit
COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.
2SD2584 Datasheet
