2SC5359 NPN TRANSISTOR

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm * High breakdown voltage: VCEO = 2.

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Datasheet Specifications

Part number: 2SC5359
Manufacturer: Toshiba ↗ Semiconductor
File Size: 175.69 KB
Datasheet: 2SC5359_ToshibaSemiconductor.pdf
Description: NPN TRANSISTOR

Applications

* 2SC5359 Unit: mm
* High breakdown voltage: VCEO = 230 V
* Complementary to 2SA1987
* Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Col

2SC5359 Distributors

📁 Related Datasheet

2SC535 2SC5353B 2SC5356 2SC5358 2SC5300 2SC5301

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2SC5359 NPN TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC5359-like datasheet