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2SC2712 - Silicon NPN Transistor

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ. ) (6) Low noise: NF = 1 dB (typ. ), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 2SC2712 S-Mini 1: Base 2: Emitter 3: Collector ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-10 2022-02-.

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Datasheet Details

Part number 2SC2712
Manufacturer Toshiba
File Size 473.74 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC2712 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1162 3. Packaging 2SC2712 S-Mini 1: Base 2: Emitter 3: Collector ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-10 2022-02-03 Rev.7.0 4.
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