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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1892
Power Amplifier Applications Power Switching Applications
2SA1892
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A)
• High collector power dissipation: PC = 1.3 W • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5029
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−50 −50 −5 −3 −0.2 1.3 150 −55 to 150
V V V A A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.
2SA1892 Datasheet
