2SA1162 - Silicon PNP Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1162
Manufacturer	Toshiba Semiconductor
File Size	305.50 KB
Description	Silicon PNP Transistor
Datasheet	2SA1162_ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) (6) Low noise: NF = 1 dB (typ. ), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-0.

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Published: Mar 22, 2005 |