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1SV329 Datasheet - Toshiba Semiconductor

1SV329 Silicon Diode

1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse.

1SV329 Datasheet (96.07 KB)

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Datasheet Details

Part number:

1SV329

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

96.07 KB

Description:

Silicon diode.

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1SV329 Silicon Diode Toshiba Semiconductor

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