1SV312 Datasheet - Toshiba Semiconductor

1SV312, Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications * Two independent diodes mounted onto a 4-pin ultra compa.

1SV312_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV312

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

72.70 KB

Description:

Diode

Applications

* Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.
* Low capacitance: CT = 0.25 pF (typ. )
* Low series resistance: rs = 3 Ω (typ. ) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction

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