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MJ21196G - 250 Watt Silicon Type Metal Package Power Transistor

Download the MJ21196G datasheet PDF. This datasheet also covers the MJ21195G variant, as both devices belong to the same 250 watt silicon type metal package power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MJ21195G-ThinkiSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ21196G
Manufacturer Thinki Semiconductor
File Size 335.03 KB
Description 250 Watt Silicon Type Metal Package Power Transistor
Datasheet download datasheet MJ21196G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP CASE 3 NPN CASE 3 CASE 1–07 TO–204AA (TO–3) 1 BASE 1 BASE EMITTER 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.
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