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DK48N18 - N-Channel Trench Process Power MOSFET

Description

The DK48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=70V；ID=158A@ VGS=10V； RDS(ON).

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Datasheet Details

Part number DK48N18
Manufacturer Thinki Semiconductor
File Size 1.02 MB
Description N-Channel Trench Process Power MOSFET
Datasheet download datasheet DK48N18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DK48N18 ® Pb Free Plating Product DK48N18 Pb 70V,158A N-Channel Trench Process Power MOSFET General Description The DK48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=158A@ VGS=10V； RDS(ON)<4.2mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply DK48N18 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 158A RDS(ON) = 3.5mΩ Table 1.
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