55NF06 - N-CHANNEL POWER MOSFET TRANSISTOR

Thinki Semiconductor

55NF06 Datasheet Preview — Preview of 55NF06 PDF

Datasheet Details

Part number	55NF06
Manufacturer	Thinki Semiconductor
File Size	299.71 KB
Description	N-CHANNEL POWER MOSFET TRANSISTOR
Datasheet	55NF06_ThinkiSemiconductor.pdf

55NF06 Product details

Description

12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switching mode power appliances.12 3 TO-220/TO-220F

Features

S 12 3 TO-252/DPAK.
RDS(ON) = 23mȍ@VGS = 10 V.
Ultra low gate charge ( typical 30 nC ).
Low reverse transfer capacitance ( CRSS = typical 80 pF ).
Fast switching capability.
100% avalanche energy specified.
Improved dv/dt capability.
SYMBOL U55NF06 P55NF06 F55NF06 D55NF06 TO-251/IPAK TO-220 TO-220F TO-252/DPAK.

📁 55NF06 Similar Datasheet

55NF03L - N-channel Power MOSFET (STMicroelectronics)
55N03L - N-Channel FET (ETC)
55N03LT - PHB55N03LT (NXP)
55N03LTA - Logic Level FET (Philips)
55N06L - STP55N06L (STMicroelectronics)
55N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
55N12B - MCF (Nihon)
55N17B - MCF (Nihon)

Other Datasheets by Thinki Semiconductor

Published: Jan 1, 2014 |