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SMB60N03-10L
N-Channel Enhancement-Mode MOSFETs, Logic Level
Product Summary
V(BR)DSS (V)
30
rDS(on) (W)
0.01 @ VGS = 10 V
ID (A)a
60
D
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TO-263
G
G D S Top View S N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Currentb Repetitive Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) L = 0.1 mH L = 0.