TD99102 Datasheet (Teledyne) - High-speed FET and GaN Transistor Driver

TD99102, High-speed FET and GaN Transistor Driver

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.

The outputs of the TD99102 are capable of providing switching transition speeds in the sub

TD99102 Features

* TID = 100 krad(Si)

* SEL Immune

* High- and Low-side FET drivers

* Dead-time control

* Fast propagation delay, 9 ns

* Tri-state enable mode

* Sub-nanosecond rise and fall time

* 2 A / 4 A peak source/sink current

* Bumped flip