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TDM3478 - N-Channel Enhancement Mode MOSFET

Description

The TDM3478 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) < 9.7mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V.
  • High Power and current handling capability.
  • ESD Protection.
  • Surface Mount Package.
  • Lead Free and Green Devices available(RoHS Compliant).

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Datasheet preview – TDM3478

Datasheet Details

Part number TDM3478
Manufacturer Techcode
File Size 389.09 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3478 Datasheet
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Full PDF Text Transcription

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Techcode® N-Channel Enhancement Mode MOSFET DESCRIPTION The TDM3478 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < 9.7mΩ @ VGS=4.
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