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TSSA3U45 Datasheet - Taiwan Semiconductor

TSSA3U45 Trench MOS Barrier Schottky Rectifier

Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 5 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 AVERAGE FORWARD CURRENT (A) 4 10 Tj=125oC 1 Tj=150oC 3 2 Tj=100oC 0.1 Tj=25oC 0.01 0 0.1 0.2.

TSSA3U45 Features

* - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS

TSSA3U45 Datasheet (163.93 KB)

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Datasheet Details

Part number:

TSSA3U45

Manufacturer:

Taiwan Semiconductor

File Size:

163.93 KB

Description:

Trench mos barrier schottky rectifier.

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TAGS

TSSA3U45 Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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