TSM8N80 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.4 @ VGS =10V .
The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number: TSM8N80
Manufacturer: Taiwan Semiconductor
File Size: 409.13 KB
Datasheet: TSM8N80-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) 1.4Ω (Max. ) Low gate charge typical @ 41nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM8N80CZ C0 TSM8N80CZ C0G Package TO-220 TO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM8N80CI C0G ITO-220 50pcs / Tube Note: “G” d

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: C13

TSM8N80 Distributors

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TSM8N80 N-Channel Power MOSFET Taiwan Semiconductor

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