TSM60N03 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =1.
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Datasheet Specifications

Part number: TSM60N03
Manufacturer: Taiwan Semiconductor
File Size: 263.64 KB
Datasheet: TSM60N03-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Advanced Trench Technology
* Low RDS(ON) 4.5mΩ (Max. )
* Low gate charge typical @ 12nC (Typ. )
* Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM60N03CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-C

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

TSM60N03 Distributors

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TSM60N03 N-Channel Power MOSFET Taiwan Semiconductor

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