TSM210N06 - N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Part number	TSM210N06
Manufacturer	Taiwan Semiconductor
File Size	56.56 KB
Description	N-Channel Power MOSFET
Datasheet	TSM210N06-TaiwanSemiconductor.pdf

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Advanced Trench Technology.
Low RDS(ON) 3.1mΩ (Max. ).
Low gate charge typical @ 160nC (Typ. ).
Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Ava.

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Published: Apr 23, 2016 |