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TSM12N65 650V N-Channel Power MOSFET

TSM12N65 Description

TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A.
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM12N65 Features

* Low RDS(ON) 0.68Ω (Typ. ) Low gate charge typical @ 41nC (Typ. ) Low Crss typical @ 14.6pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

TSM12N65 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A10 Free Datasheet http://www. datasheet4u. com/

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Datasheet Details

Part number
TSM12N65
Manufacturer
Taiwan Semiconductor
File Size
482.84 KB
Datasheet
TSM12N65_TaiwanSemiconductor.pdf
Description
650V N-Channel Power MOSFET

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650V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM12N65-like datasheet