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TSM038N03 - N-Channel Power MOSFET

Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • 100% avalanche tested.
  • Fast switching.
  • Pb-free plating.
  • RoHS compliant.
  • Halogen-free mold compound.

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Full PDF Text Transcription (Reference)

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TSM038N03 Taiwan Semiconductor N-Channel Power MOSFET 30V, 80A, 3.8mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Mobile device DC-DC conversion ● Point of Load (POL) DC-DC ● Secondary Switch Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) VGS =10V 3.8 mΩ VGS =4.5V 5.5 Qg 24 nC PDFN33 Notes: Moisture sensitivity level: level 3.
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