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TSG65N195CE Power Transistor

TSG65N195CE Description

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TSG65N195CE Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled 8x8 mm PDFN package
* RDS(on)(Typ) = 150 mΩ
* DS(max) = 11 A / IDS(Max pulse) = 19A
* Ultra-low FOM
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant g

TSG65N195CE Applications

* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance Motor Drives
* Wireless Power Transfer
* Industrial Power Supplies TSG65N195CE Taiwan Semiconductor KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 650 V RDS(

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Power Transistor Taiwan Semiconductor
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