Datasheet4U Logo Datasheet4U.com

HER306G, HER301G Datasheet - Taiwan Semiconductor

HER306G Glass Passivated High Efficient Rectifiers

Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 4.0 RESISTIVE OR 3.0 INDUCTIVE LOAD 2.0 1.0 0.0 0 25 50 75 100 125 150 175 CASE TEMPERATURE (oC) INSTANTANEOUS REVERS.

HER306G Features

* - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA

HER301G-TaiwanSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HER306G, HER301G. Please refer to the document for exact specifications by model.
HER306G Datasheet Preview Page 2 HER306G Datasheet Preview Page 3

Datasheet Details

Part number:

HER306G, HER301G

Manufacturer:

Taiwan Semiconductor

File Size:

369.65 KB

Description:

Glass passivated high efficient rectifiers.

Note:

This datasheet PDF includes multiple part numbers: HER306G, HER301G.
Please refer to the document for exact specifications by model.

HER306G Distributor

📁 Related Datasheet

HER306 3A High Efficiency Diodes (Leshan Radio Company)

HER306 HIGH EFFICIENCY RECTIFIER (Rectron Semiconductor)

HER306 3.0 Amp High Efficient Rectifiers (Micro Commercial Components)

HER306 HIGH EFFICIENCY RECTIFIER (GOOD-ARK Electronics)

HER306 3.0 AMP HIGH EFFICIENCY RECTIFIERS (Formosa MS)

HER306 TECHNICAL SPECIFICATIONS OF HIGH EFFICIENCY RECTIFIER (Dc Components)

HER306 HIGH EFFICIENT RECTIFIER DIODES (EIC discrete Semiconductors)

HER306 3.0A ULTRAFAST DIODE (WON-TOP)

TAGS

HER306G HER301G Glass Passivated High Efficient Rectifiers Taiwan Semiconductor