Description
Green compound
2 Version:C1702
ES1D-T - ES1J-T
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
1.2
Fig2. Typical Junction Capacitance
100
CAPACITANCE (pF)
AVERAGE FORWARD CURRENT (A)
1
0.8 ES1G-T - ES1J-T
ES1D-T 0.6 10
0.4
0.2 Resister or inductive load
0 80 90 100 110 120 130 140
LEAD TEMPERATURE (°C)
150
f=1.0MHz Vsig=50mVp-p
1 0.1
1 10 REVERSE VOLTAGE (V)
100
Fig3. Typical Reverse Characteristics
1000
100 10
Features
- Glass passivated junction chip.
 
- Ideal for automated placement.
 
- Super fast recovery time for high efficiency.
 
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC.
 
- Halogen-free according to IEC 61249-2-21.