SIMFSZN2106M1 Datasheet (TT) - N-Channel Enhancement Mode Power MOSFET

SIMFSZN2106M1, N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET SIMFSZN2106M1 Hermetic Metal TO-257AA Package VDSS = 60V , ID = 1.0A, RDS(ON) = 4.0Ω Fast Switching, Low CISS Integral Source-Drain Body Diode High Reliability and Screening options available Termination Finish Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C PD Total Power Dissipation at TJ = 25°C PD Derate Above 25°C TJ Operatin