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OP297 - Plastic Infrared Emitting Diode

Download the OP297 datasheet PDF. This datasheet also covers the OP290 variant, as both devices belong to the same plastic infrared emitting diode family and are provided as variant models within a single manufacturer datasheet.

Description

Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298AA, which has an 875 nm center wa

Features

  • Choice of narrow or wide irradiance pattern.
  • Choice of power ranges.
  • Choice of T-1¾, TO-18 or TO-46 package.
  • Higher power output than GaAs at equivalent LEDs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OP290-TT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
OP297 Dual Low Bias Current Precision Operational Amplifier Analog Devices
OP290 Precision / Low Power / Micropower Dual Operational Amplifier Analog Devices
OP291 Micropower Single-Supply Rail-to-Rail Input/Output Op Amps Analog Devices
OP292 DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIER Analog Devices
OP293 Precision / Micropower Operational Amplifiers Analog Devices

Other Datasheets by TT Electronics

Part Number Description
OP290 Plastic Infrared Emitting Diode
OP292 Plastic Infrared Emitting Diode
OP293C Plastic Infrared Emitting Diode
OP295C Plastic Infrared Emitting Diode
OP296C Plastic Infrared Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Plastic Infrared Emitting Diode OP290 Series Obsolete [OP291 (B, C), OP292 (B, C), OP293C, OP295C, OP296C, OP297 (B, C), OP298 (AB, AC, AD)] Features: • Choice of narrow or wide irradiance pattern • Choice of power ranges • Choice of T-1¾, TO-18 or TO-46 package • Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298AA, which has an 875 nm center wavelength. For identification purposes, each LED anode lead is longer than the cathode lead.
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