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N-CHANNEL POWER MOSFET
IRFY330
• BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package
• Designed For Switching, Power Supply, Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
400V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current Tc = 25°C
5.5A
ID
Continuous Drain Current Tc = 100°C
3.5A
IDM
Pulsed Drain Current (1)
22A
PD
Total Power Dissipation at Tc = 25°C
75W
Derate Above 25°C
0.6W/°C
EAS
Single Pulse Avalanche Energy (2)(5)
1.7mJ
IAR
Avalanche Current (1)(5)
5.
IRFY330 Datasheet
