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BUX10 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

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Datasheet Details

Part number BUX10
Manufacturer TT
File Size 185.54 KB
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR
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Full PDF Text Transcription

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 160V VCEX Collector – Emitter Voltage VBE = -1.5V 160V VCEO Collector – Emitter Voltage 125V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 25A ICM Peak Collector Current tp = 10ms 30A IB Base Current 5A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 0.85W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.
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