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SILICON MULTI-EPITAXIAL NPN TRANSISTOR
BUP52
• Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching
and Linear Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEX
Collector – Emitter Voltage VBE = -1.5V
300V
VCEO
Collector – Emitter Voltage
200V
VEBO
Emitter – Base Voltage
10V
IC
Continuous Collector Current
70A
ICM
Peak Collector Current
90A
PD
Total Power Dissipation at TC = 25°C
300W
Derate Above 25°C
1.72W/°C
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units 0.
BUP52 Datasheet
