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TMAN10N80 N-channel MOSFET

TMAN10N80 Description

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TMAN10N80 Features

* Low gate charge
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant
* JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.05 W(max) @ VGS= 10 V D G Device TMAN10N80 Package TO-3P Marking TMAN10N80 Absolute Maximum Ratings Parameter Dr

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Datasheet Details

Part number
TMAN10N80
Manufacturer
TRinno
File Size
482.97 KB
Datasheet
TMAN10N80-TRinno.pdf
Description
N-channel MOSFET

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N-channel MOSFET TRinno
TRinno TMAN10N80-like datasheet