Datasheet Specifications
- Part number
- SB073P125-W-AG
- Manufacturer
- TRANSYS Electronics Limited
- File Size
- 184.38 KB
- Datasheet
- SB073P125-W-AG_TRANSYSElectronicsLimited.pdf
- Description
- Schottky Barrier Diode Wafer
Description
SB073P125-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 125 Volt, 5 Amp Data Sheet .
Features
* Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode SymbolApplications
* do so at their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal fees either direct, incidental or consequential from this improper use or sale. Dimensions in mils (mm) Transys Electronics LTD Birmingham UK. Email: sales@transyselectronics. com Website: www. transyseSB073P125-W-AG Distributors
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