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TC2896 - 5 W Flange Ceramic Packaged GaAs Power FETs

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Datasheet Details

Part number	TC2896
Manufacturer	TRANSCOM
File Size	127.25 KB
Description	5 W Flange Ceramic Packaged GaAs Power FETs
Datasheet	TC2896_TRANSCOM.pdf

TC2896 Product details

Description

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

Features

5 W Typical Power at 6 GHz.
8 dB Typical Linear Power Gain at 6 GHz.
High Linearity: IP3 = 47 dBm Typical at 6 Ghz.
High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz.
Suitable for High Reliability.

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Published: Mar 11, 2011 |