TK063N60Z1 Silicon Carbide N-Channel MOSFET

TOSHIBA

TK063N60Z1 Description

MOSFETs Silicon N-Channel MOS (DTMOS *) TK063N60Z1 1.Applications * Switching Power Supplies 2..

TK063N60Z1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA) 3. Packaging and Internal Circuit TK063N60Z1 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum R

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Datasheet Details

Part number: TK063N60Z1
Manufacturer: Toshiba ↗
File Size: 612.07 KB
Datasheet: TK063N60Z1-TOSHIBA.pdf
Description: Silicon Carbide N-Channel MOSFET

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Silicon Carbide N-Channel MOSFET TOSHIBA

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