TXY8205 Dual N-CHANNEL High Density Trench MOSFET

Description

TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Descript.
FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIM.

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Datasheet Specifications

Part number: TXY8205
Manufacturer: TMOS
File Size: 470.50 KB
Datasheet: TXY8205-TMOS.pdf
Description: Dual N-CHANNEL High Density Trench MOSFET

Features

* High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Curre

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TXY8205 Dual N-CHANNEL High Density Trench MOSFET TMOS

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