HX4N60 - N-Channel MOSFET

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Datasheet Details

Part number	HX4N60
Manufacturer	TIANJIN HUANXIN TECHNOLOGY
File Size	494.03 KB
Description	N-Channel MOSFET
Datasheet	HX4N60-TIANJINHUANXINTECHNOLOGY.pdf

HX4N60 Product details

Description

The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability.
Symbol.
Ordering Information Order Number Normal Lead Free Plating HX4N60-TA3-T HX4N60L-TA3-T HX4N60-TF3-T HX4N60L-TF3-T HX4N60-TM3-T HX4N60L-TM3-T HX4N60-TN3-T HX4N60L-TN3-T HX4N60-TN3-R HX4N60L-TN3-R Note:Pin Assignment: G:Gate D:Drain S:Source HX4N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Platin.

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Published: Mar 29, 2015 |