Description
The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.
Features
- D Hermetically sealed case D DC isolation test voltage: 500 V D Low coupling capacity
D Current Transfer Ratio, CTR selected in groups D Low temperature coefficient of the CTR
Pin Connection
A
C C
E 95 10792
Rev. A1: 20.09.1995
1 (5)
CNY18
Absolute Maximum Ratings
Input (Emitter)
Parameters Reserve voltage Forward current Forward surge current Power dissipation Junction temperature
Test Conditions
tp ≤ 10 ms Tamb ≤ 25°C.
CNY18_TEMICSemiconductors.pdf
