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1N4148.1N4448
Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes:
1N4148 – 1N914 1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation p Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV PV Tj Tstg Value 100 75 2 500 300 150 440 500 200 –65...+200 Unit V V A mA mA mA mW mW °C °C
tp=1ms
VR=0 l=4mm, TL=45°C l=4mm, TL 25°C
x
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W
TELEFUNKEN Semiconductors Rev.
1N4148T Datasheet
