TM4953S Dual P-Channel High Density Trench MOSFET

Description

TECH MOS Technology.Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9.

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Datasheet Specifications

Part number: TM4953S
Manufacturer: TECH MOS
File Size: 141.60 KB
Datasheet: TM4953S-TECHMOS.pdf
Description: Dual P-Channel High Density Trench MOSFET

Features

* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ T

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TM4953S Dual P-Channel High Density Trench MOSFET TECH MOS

TECH MOS TM4953S-like datasheet

TM4953FS