Datasheet4U Logo Datasheet4U.com

TIS4D28QES SMD Shielded Wire Wound Power Inductor

TIS4D28QES Description

SMD Shielded Wire Wound Power Inductor TIS4D28QES Series SMD Shielded Wire Wound Power Inductor .
L Inductance DCR IDC Top Tstg DC Resistance (max.

TIS4D28QES Features

* Magnetically shielded construction
* Compact and thin
* Large current and low DCR

TIS4D28QES Applications

* DC-DC converter of portable equipment
* Camcorder, LCD television set, digital camera, notebook Dimensions (Top View) (Side View) (Bottom View) A Max. B Max. C Max. D Typ. E Typ. F Typ. G Max. 5.0 5.0 3.1 4.5 4.5 1.5 6.9 (Pad Layout) Unit: mm H Typ. I Typ. J Typ. 5.3 1.9

📥 Download Datasheet

Preview of TIS4D28QES PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TIS4D28QES
Manufacturer
TAITRON
File Size
426.12 KB
Datasheet
TIS4D28QES-TAITRON.pdf
Description
SMD Shielded Wire Wound Power Inductor

📁 Related Datasheet

  • TIS58 - N-Channel Transistor (Texas Instruments)
  • TIS59 - N-Channel Transistor (Texas Instruments)
  • TIS60 - Silicon NPN Transistor (Texas Instruments)
  • TIS60M - Silicon NPN Transistor (Texas Instruments)
  • TIS61 - Silicon NPN Transistor (Texas Instruments)
  • TIS61M - Silicon NPN Transistor (Texas Instruments)
  • TIS63 - Silicon NPN Transistor (Texas Instruments)
  • TIS68 - N-Channel FET (Texas Instruments)

📌 All Tags

SMD Shielded Wire Wound Power Inductor TAITRON
TAITRON TIS4D28QES-like datasheet