MJ11032 Datasheet (TAITRON) - Darlington Power Transistors

MJ11032, Darlington Power Transistors

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range Value 120 120 5.0

MJ11032 Features

* Designed for use as output devices in complementary General purpose amplifier

* High Gain Darlington performance

* High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A

* Monolithic construction with built-in base-emitter shunt resistor

* RoHS Compliant TO-3 Me